au.\*:("D'COSTA, V. R")
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Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(111) substratesROUCKA, R; AN, Y.-J; CHIZMESHYA, A. V. G et al.Solid-state electronics. 2008, Vol 52, Num 11, pp 1687-1690, issn 0038-1101, 4 p.Article
Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductorsD'COSTA, V. R; FANG, Y.-Y; TOLLE, J et al.Thin solid films. 2010, Vol 518, Num 9, pp 2531-2537, issn 0040-6090, 7 p.Conference Paper
Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocksFANG, Y.-Y; D'COSTA, V. R; TOLLE, J et al.Solid state communications. 2009, Vol 149, Num 1-2, pp 78-81, issn 0038-1098, 4 p.Article
Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)FANG, Y.-Y; D'COSTA, V. R; TOLLE, J et al.Thin solid films. 2008, Vol 516, Num 23, pp 8327-8332, issn 0040-6090, 6 p.Article
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectorsHUANG, Y; RYOU, J.-H; DUPUIS, R. D et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 92-96, issn 0022-0248, 5 p.Article
Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper
Raman scattering in Ge1-ySny alloysD'COSTA, V. R; TOLLE, J; ROUCKA, R et al.Solid state communications. 2007, Vol 144, Num 5-6, pp 240-244, issn 0038-1098, 5 p.Article
Menopausal asthma: a new biological phenotype?FOSCHINO BARBARO, M. P; COSTA, V. R; RESTA, O et al.Allergy (Copenhagen). 2010, Vol 65, Num 10, pp 1306-1312, issn 0105-4538, 7 p.Article
